| PART |
Description |
Maker |
| APT65GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT40GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT45GP120J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT11GP60BDQB |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT13GP120K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| 2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistor
From old datasheet system
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
